Cypress Semiconductor CY7C1006D Arkusz specyfikacji - Strona 3

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Maximum Ratings

Exceeding the maximum ratings may impair the useful life of
the device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on V
Relative to GND
CC
DC Voltage Applied to Outputs
[3]
in High-Z State
...................................–0.5V to V

Electrical Characteristics

Parameter
Description
V
Output HIGH Voltage
OH
V
Output LOW Voltage
OL
V
Input HIGH Voltage
IH
V
Input LOW Voltage
IL
I
Input Leakage Current
IX
I
Output Leakage Current
OZ
I
V
Operating Supply Current
CC
CC
I
Automatic CE Power-Down
SB1
Current—TTL Inputs
I
Automatic CE Power-Down
SB2
Current—CMOS Inputs
Note
3. V
(min) = –2.0V and V
(max) = V
IL
IH
Document #: 38-05459 Rev. *E
[3]
... –0.5V to +6.0V
+ 0.5V
CC
(Over the Operating Range)
I
= –4.0 mA
OH
I
= 8.0 mA
OL
[3]
GND < V
GND < V
V
= Max,
CC
I
= 0 mA,
OUT
f = f
= 1/t
max
Max V
CC
V
> V
IN
IH
Max V
CC
V
> V
IN
CC
+ 1V for pulse durations of less than 5 ns.
CC
[3]
DC Input Voltage
............................... –0.5V to V
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage .......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current .................................................... > 200 mA

Operating Range

Ambient
Range
Temperature
Industrial
–40°C to +85°C
Test Conditions
< V
I
CC
< V
, Output Disabled
I
CC
100 MHz
83 MHz
RC
66 MHz
40 MHz
, CE > V
,
IH
or V
< V
, f = f
IN
IL
max
, CE > V
– 0.3V,
CC
– 0.3V or V
< 0.3V, f=0
IN
CY7C106D
CY7C1006D
+ 0.5V
CC
V
Speed
CC
5V ± 0.5V
10 ns
7C106D-10
7C1006D-10
Unit
Min
Max
2.4
V
0.4
V
2.2
V
+ 0.5
V
CC
–0.5
0.8
V
µA
–1
+1
µA
–1
+1
80
mA
72
mA
58
mA
37
mA
10
mA
3
mA
Page 3 of 11
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