Cypress Semiconductor CY7C1007B Arkusz specyfikacji - Strona 3

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Electrical Characteristics
Parameter
Description
V
Output HIGH
OH
Voltage
V
Output LOW Voltage
OL
V
Input HIGH Voltage
IH
V
Input LOW Voltage
IL
I
Input Load Current
IX
I
Output Leakage
OZ
Current
I
Output Short
OS
Circuit Current
I
V
Operating
CC
CC
Supply Current
I
Automatic CE
SB1
Power-Down
Current—TTL Inputs
I
Automatic CE
SB2
Power-Down
Current—CMOS Inputs
[4]
Capacitance
Parameter
C
: Addresses
Input Capacitance
IN
C
: Controls
IN
C
Output Capacitance
OUT
Note:
4.
Tested initially and after any design or process changes that may affect these parameters.
Document #: 38-05030 Rev. **
Over the Operating Range (continued)
Test Conditions
V
= Min., I
= 4.0 mA
CC
OH
V
= Min., I
= 8.0 mA
CC
OL
[1]
GND < V
< V
I
CC
GND < V
< V
,
I
CC
Output Disabled
V
= Max., V
CC
OUT
[3]
V
= Max.,
CC
I
= 0 mA,
OUT
f = f
= 1/t
MAX
RC
Max. V
, CE > V
CC
V
>V
or V
< V
IN
IH
IN
f = f
MAX
Max. V
,
CC
CE > V
– 0.3V,
CC
V
> V
– 0.3V or
IN
CC
V
< 0.3V, f = 0
IN
Description
T
= 25 C, f = 1 MHz,
A
V
CC
7C107B-25
7C1007B-25
Min.
Max.
2.4
0.4
2.2
V
+ 0.3
CC
0.3
0.8
1
+1
5
+5
= GND
300
70
,
20
IH
,
IL
2
Test Conditions
= 5.0V
CY7C107B
CY7C1007B
7C107B-35
7C1007B-35
Min.
Max.
Unit
2.4
V
0.4
V
2.2
V
+ 0.3
V
CC
0.3
0.8
V
1
+1
A
5
+5
A
300
mA
60
mA
20
mA
2
mA
Max.
Unit
7
pF
10
pF
10
pF
Page 3 of 9
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