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Maximum Ratings

Exceeding the maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature .................................. –65°C to +150°C
Ambient Temperature with
Power Applied ............................................ –55°C to +125°C
Supply Voltage to Ground Potential –0.5V to V
DC Voltage Applied to Outputs
[3, 4]
in High-Z State
........................–0.5V to V

Electrical Characteristics

Over the Operating Range
Parameter
Description
V
Output HIGH Voltage
OH
V
Output LOW Voltage
OL
V
Input HIGH Voltage
IH
V
Input LOW Voltage
IIL
I
Input Leakage Current
IX
I
Output Leakage Current
OZ
I
V
Operating Supply
CC
CC
Current
I
Automatic CE Power down
SB1
Current — CMOS Inputs
[6]
I
Automatic CE Power-down
SB2
Current — CMOS Inputs
Capacitance
Tested initially and after any design or process changes that may affect these parameters.
Parameter
Description
C
Input Capacitance
IN
C
Output Capacitance
OUT

Thermal Resistance

Tested initially and after any design or process changes that may affect these parameters.
Parameter
Description
Θ
Thermal Resistance
JA
(Junction to Ambient)
Θ
Thermal Resistance
JC
(Junction to Case)
Notes
3. V
(min) = –2.0V for pulse durations less than 20 ns.
IL
4. V
(max) = V
+ 0.75V for pulse durations less than 20 ns.
IH
CC
5. Full Device AC operation assumes a 100 μs ramp time from 0 to V
6. Only chip enables (CE
and CE
), must be tied to CMOS levels to meet the I
1
2
Document #: 38-05684 Rev. *D
DC Input Voltage
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage............................................ >2001V
(MIL-STD-883, Method 3015)
Latch up Current...................................................... >200 mA

Operating Range

+ 0.5V
CC(max)
+ 0.5V
CY62158ELL
CC(max)
Test Conditions
I
= –1 mA
OH
I
= 2.1 mA
OL
V
= 4.5V to 5.5V
CC
V
= 4.5V to 5.5V
CC
GND < V
< V
I
CC
GND < V
< V
, Output Disabled
O
CC
f = f
= 1/t
V
MAX
RC
CC
I
f = 1 MHz
OUT
CMOS levels
− 0.2V, CE
CE
> V
< 0.2V
1
CC
2
V
> V
– 0.2V, V
< 0.2V)
IN
CC
IN
f = f
(Address and Data Only),
MAX
f = 0 (OE, and WE), V
= V
CC
CE
> V
– 0.2V or CE
< 0.2V,
1
CC
2
V
> V
– 0.2V or V
< 0.2V,
IN
CC
IN
f = 0, V
= V
CC
CCmax
Test Conditions
T
= 25°C, f = 1 MHz,
A
V
= V
CC
CC(typ)
Test Conditions
Still Air, soldered on a 3 × 4.5 inch,
two-layer printed circuit board
(min) and 200 μs wait time after V
CC
/ I
spec. Other inputs can be left floating.
SB2
CCDR
CY62158E MoBL
[3, 4]
.....................–0.5V to V
Device
Range
Industrial –40°C to +85°C 4.5V – 5.5V
Min
2.4
2.2
–0.5
–1
–1
= V
CCmax
= 0 mA
CCmax
stabilization.
CC
®
+ 0.5V
CC(max)
Ambient
[5]
V
CC
Temperature
-45
[2]
Typ
Max
Unit
V
0.4
V
V
+ 0.5V
V
CC
0.8
V
μA
+1
μA
+1
18
25
mA
1.8
3
mA
μA
2
8
μA
2
8
Max
Unit
10
pF
10
pF
TSOP II
Unit
°C/W
75.13
°C/W
8.95
Page 3 of 10
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