Cypress Semiconductor MoBL CY62157E Ficha de especificações - Página 4
Procurar online ou descarregar pdf Ficha de especificações para Hardware informático Cypress Semiconductor MoBL CY62157E. Cypress Semiconductor MoBL CY62157E 12 páginas. 8-mbit (512k x 16) static ram
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Thermal Resistance
Parameter
Description
Θ
Thermal Resistance
JA
(Junction to Ambient)
Θ
Thermal Resistance
JC
(Junction to Case)
AC Test Loads and Waveforms
R1
V
CC
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
Parameters
R1
R2
R
TH
V
TH
Data Retention Characteristics
Parameter
Description
V
V
for Data Retention
DR
CC
I
Data Retention Current
CCDR
[9]
t
Chip Deselect to Data
CDR
Retention Time
[10]
t
Operation Recovery Time
R
Data Retention Waveform
V
CC
CE
or
1
BHE.BLE
CE
2
Notes:
10. Full device operation requires linear V
11. BHE.BLE is the AND of both BHE and BLE. Chip can be deselected by either disabling the chip enable signals or by disabling both BHE and BLE.
Document #: 38-05695 Rev. *C
Test Conditions
Still Air, soldered on a 3 × 4.5 inch,
two-layer printed circuit board
R2
Rise Time = 1 V/ns
Equivalent to:
OUTPUT
(Over the Operating Range)
V
=2V, CE
> V
CC
1
CC
CE
< 0.2V, V
> V
2
IN
CC
[11]
DATA RETENTION MODE
V
CC(min)
t
CDR
> 100 µs or stable at V
ramp from V
to V
CC
DR
CC(min)
ALL INPUT PULSES
3V
90%
10%
GND
THEVENIN EQUIVALENT
R
TH
Values
1800
990
639
1.77
Conditions
– 0.2V,
Industrial
– 0.2V or V
< 0.2V
IN
Automotive
V
> 2 V
DR
> 100 µs.
CC(min)
CY62157E MoBL
TSOP II VFBGA
Unit
77
72
°C/W
13
8.86
°C/W
90%
10%
Fall Time = 1 V/ns
V
Unit
Ω
Ω
Ω
V
[4]
Min
Typ
Max
2
8
30
0
t
RC
V
CC(min)
t
R
Page 4 of 12
®
Unit
V
µA
ns
ns
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