Cypress Semiconductor Nine-Output 3.3V Buffer CY2309NZ Manual - Página 2

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Pinouts
Table 1. Pin Description for CY2309NZ
Pin
Signal
4, 8, 13
V
DD
5, 9, 12
GND
1
BUF_IN
2, 3, 6, 7, 10,
OUTPUT [1:9]
11, 14, 15, 16

Maximum Ratings

Supply Voltage to Ground Potential................–0.5V to +7.0V
DC Input Voltage (Except REF) ............ –0.5V to V
DC Input Voltage REF .........................................–0.5V to 7V

Operating Conditions

Parameter
V
Supply Voltage
DD
T
(Ambient Operating Temperature) Commercial
A
(Ambient Operating Temperature) Industrial
C
Load Capacitance, Fout < 100 MHz
L
Load Capacitance,100 MHz < Fout < 133.33 MHz
C
Input Capacitance
IN
BUF_IN, OUTPUT [1:9] Operating Frequency
t
Power up time for all VDDs to reach minimum specified
PU
voltage (power ramps must be monotonic)

Electrical Characteristics

Parameter
Description
V
Input LOW Voltage
IL
V
Input HIGH Voltage
IH
I
Input LOW Current
IL
I
Input HIGH Current
IH
V
Output LOW Voltage
OL
V
Output HIGH Voltage
OH
I
Supply Current
DD
Notes
1. BUF_IN input has a threshold voltage of V
2. Parameter is guaranteed by design and characterization. It is not 100% tested in production.
Document #: 38-07182 Rev. *E
Figure 1. CY2309NZ - 16 SOIC-Top View
BUF_IN
1
OUTPUT1
2
3
OUTPUT2
V
4
DD
GND
5
6
OUTPUT3
7
OUTPUT4
V
8
DD
3.3V Digital Voltage Supply
Ground
Input Clock
Outputs
+ 0.5V
DD
for Commercial and Industrial Temperature Devices
Description
for Commercial and Industrial Temperature Devices
Test Conditions
[1]
[1]
V
= 0V
IN
V
= V
IN
DD
[2]
I
= 8 mA
OL
[2]
I
= –8 mA
OH
Unloaded outputs at 66.66 MHz
/2.
DD
OUTPUT9
16
15
OUTPUT8
OUTPUT7
14
V
13
DD
GND
12
OUTPUT6
11
OUTPUT5
10
GND
9
Description
Storage Temperature ................................. –65
Junction Temperature ................................................. 150
Static Discharge Voltage
(per MIL-STD-883, Method 3015) ............................ >2,000V
Min
3.0
0
–40
DC
0.05
Min
2.0
2.4
CY2309NZ
°
°
C to +150
C
°
C
Max
Unit
3.6
V
°
70
C
°
85
C
30
pF
15
pF
7
pF
133.33
MHz
50
ms
Max
Unit
0.8
V
V
μA
50.0
μA
100.0
0.4
V
V
32
mA
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