Audionet AMP 1 Руководство пользователя - Страница 6

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Technical information

Construction

The AMP I is constructed as a dual-mono amplifier. SMD techniques are

used to optimise high-frequency characteristics. All signal paths are re-

duced to minimum length. No 'evil' elements (coupling capacitors, coils,

relays) are located in the signal path. The construction is magnetically

and capacitively optimised. Negative magnetic and electric influence and

interaction between input, decoupling and power section are reduced to a

residual minimum.

Power supply

The input sections are supplied by a 50 VA toroidal transformer with

separate windings for stereo channels. Two potted 700 VA toroidal trans-

formers feed the power section. The control unit is supplied by another

transformer.

The capacity of the fast and pulse-resistant high-current capacitors is

132,000 mF. The voltages are regulated with discrete and optimised ultra

high-speed MOS-FET regulators.

Circuit

The audio signal is received by a monolithic dual FET preceding a dual-

stage voltage amplifier. Its gain-bandwidth product exceeds 1 GHz. Input

and output section are decoupled using „bootstrapped" emitter followers.

The output section is equipped with power MOS-FETs. They can handle

a pulse power up to 2.5 kW. The high bias current through that stage

(0.4 Amperes) is regulated actively. Therefore, signals at normal volume

level are handled pure Class A.

The protection circuit permanently controls DC, HF, temperature and

overload. In case of trouble the AMP I is switched to stand-by state. The

problem source is indicated by a flash code of the LED next to the

„power" button.