Cypress CY62128B Технические характеристики - Страница 4

Просмотреть онлайн или скачать pdf Технические характеристики для Компьютерное оборудование Cypress CY62128B. Cypress CY62128B 12 страниц. Mobl 1-mbit (128k x 8) static ram

[6]
Thermal Resistance
Parameter
Description
Θ
Thermal Resistance
JA
(Junction to Ambient)
Θ
Thermal Resistance
JC
(Junction to Case)
[6]
Capacitance
Parameter
C
Input Capacitance
IN
C
Output Capacitance
OUT
AC Test Loads and Waveforms
R1 1800Ω
5V
OUTPUT
100 pF
INCLUDING
JIG AND
SCOPE
(a)
Equivalent to:
THÉVENIN EQUIVALENT
639 Ω
OUTPUT
Data Retention Waveform
V
CC
CE
1
or
CE 2
Data Retention Characteristics
Parameter
Description
V
V
for Data Retention
DR
CC
I
Data Retention Current
CCDR
t
Chip Deselect to Data Retention
CDR
Time
t
Operation Recovery Time
R
Note:
6.
Tested initially and after any design or process changes that may affect these parameters.
Document #: 38-05300 Rev. *C
Test Conditions
Test conditions follow standard test
methods and procedures for
measuring thermal impedance, per
EIA / JESD51.
Description
T
= 25°C, f = 1 MHz,
A
V
CC
R1 1800Ω
5V
OUTPUT
R2
5 pF
990
INCLUDING
JIG AND
SCOPE
(b)
1.77V
DATA RETENTION MODE
V
, min.
CC
t
CDR
(Over the Operating Range for "LL" version only)
V
= V
CC
DR
≤ 0.3V, V
or CE
2
0.3V
32 SOIC 32 TSOP 32 STSOP 32 RTSOP
66.17
97.44
30.87
26.05
Test Conditions
= 5.0V
V
CC
R2
GND
990 Ω
Rise TIme:
1 V/ns
V
> 2 V
DR
Conditions
≥ V
= 2.0V, CE
– 0.3V,
1
CC
≥ V
– 0.3V or, V
IN
CC
IN
CY62128B
MoBL
105.14
97.44
14.09
26.05
Max.
Unit
9
pF
9
pF
ALL INPUT PULSES
90%
90%
10%
Fall TIme:
1 V/ns
V
, min.
CC
t
R
Min.
Typ.
Max.
2.0
1.5
15
0
70
Page 4 of 11
®
Unit
°C/W
°C/W
10%
Unit
V
µA
ns
ns
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