Cypress CY62138EV30 Технический паспорт

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Features
• Very high speed: 45 ns
— Wide voltage range: 2.20V – 3.60V
• Pin-compatible with CY62138CV30
• Ultra-low standby power
— Typical standby current: 1 µA
— Maximum standby current: 7 µA
• Ultra-low active power
— Typical active current: 2 mA @ f = 1 MHz
• Easy memory expansion with CE and OE features
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Offered in Pb-free 36-ball BGA package
Logic Block Diagram
Note:
1. For best practice recommendations, please refer to the Cypress application note "System Design Guidelines" on http://www.cypress.com.
Cypress Semiconductor Corporation
Document #: 38-05577 Rev. *A
2-Mbit (256K x 8) MoBL
Data in Drivers
A
0
A
1
A
2
A
3
A
4
A
5
A
6
256K x 8
A
7
ARRAY
A
8
A
9
A
10
A
11
COLUMN
CE
DECODER
WE
OE
•
198 Champion Court
Functional Description
The CY62138EV30 is a high-performance CMOS static RAM
organized as 256K words by 8 bits. This device features
advanced circuit design to provide ultra-low active current.
This is ideal for providing More Battery Life™ (MoBL
portable applications such as cellular telephones. The device
also has an automatic power-down feature that significantly
reduces power consumption. The device can be put into
standby mode reducing power consumption when deselected
(CE HIGH).
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. Data on the eight I/O
pins (I/O
through I/O
) is then written into the location
0
7
specified on the address pins (A
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing Write
Enable (WE) HIGH. Under these conditions, the contents of
the memory location specified by the address pins will appear
on the I/O pins.
The eight input/output pins (I/O
high-impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), or during a write
operation (CE LOW and WE LOW).
I/O
0
I/O
1
I/O
2
I/O
3
I/O
4
I/O
5
I/O
6
POWER
DOWN
I/O
7
,
•
San Jose
CA 95134-1709
CY62138EV30
MoBL
®
Static RAM
[1]
®
) in
through A
).
0
18
through I/O
) are placed in a
0
7
•
408-943-2600
Revised February 14, 2006
®
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