Cypress Semiconductor CY62147EV30 MoBL Руководство - Страница 6
Просмотреть онлайн или скачать pdf Руководство для Компьютерное оборудование Cypress Semiconductor CY62147EV30 MoBL. Cypress Semiconductor CY62147EV30 MoBL 14 страниц. 4-mbit (256k x 16) static ram
Печатать страницу
Switching Waveforms
ADDRESS
PREVIOUS DATA VALID
DATA OUT
ADDRESS
CE
OE
BHE/BLE
HIGH IMPEDANCE
DATA OUT
t
PU
V
CC
SUPPLY
CURRENT
Notes
17. The device is continuously selected. OE, CE = V
18. WE is HIGH for read cycle.
19. Address valid before or similar to CE and BHE, BLE transition LOW.
Document #: 38-05440 Rev. *G
Figure 6. Read Cycle No. 1 (Address Transition Controlled)
t
AA
t
OHA
Figure 7. Read Cycle No. 2 (OE Controlled)
t
RC
t
ACE
t
DOE
t
LZOE
t
DBE
t
LZBE
t
LZCE
50%
, BHE, BLE, or both = V
IL
t
RC
[1, 18, 19]
DATA VALID
.
IL
CY62147EV30 MoBL
[17, 18]
DATA VALID
t
PD
t
HZCE
t
HZOE
t
HZBE
HIGH
IMPEDANCE
I
50%
Page 6 of 13
®
CC
I
SB
[+] Feedback