Cypress CY62128EV30 Şartname Sayfası - Sayfa 4
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Capacitance
[8]
(For all packages)
Parameter
C
Input Capacitance
IN
C
Output Capacitance
OUT
Thermal Resistance
Parameter
Description
Θ
Thermal Resistance
JA
(Junction to Ambient)
Θ
Thermal Resistance
JC
(Junction to Case)
R1
V
CC
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
Parameters
R1
R2
R
TH
V
TH
Data Retention Characteristics
(Over the Operating Range)
Parameter
Description
V
V
for Data Retention
DR
CC
[7]
I
Data Retention Current
CCDR
[8]
t
Chip Deselect to Data Retention
CDR
Time
[9]
t
Operation Recovery Time
R
Note
8. Tested initially and after any design or process changes that may affect these parameters.
9. Full device AC operation requires linear V
Document #: 38-05579 Rev. *D
Description
T
= 25°C, f = 1 MHz,
A
V
CC
Test Conditions
Still Air, soldered on a 3 x 4.5 inch,
two-layer printed circuit board
Figure 1. AC Test Loads and Waveforms
V
CC
R2
GND
Rise Time = 1 V/ns
Equivalent to:
THEVENIN
OUTPUT
2.50V
16667
15385
8000
1.20
V
= 1.5V,
CC
− 0.2V or CE
CE
> V
1
CC
− 0.2V or V
V
> V
IN
CC
> 100 μs or stable at V
ramp from V
to V
CC
DR
CC(min)
Test Conditions
= V
CC(typ)
TSOP I
33.01
3.42
ALL INPUT PULSES
90%
10%
EQUIVALENT
R
TH
V
3.0V
1103
1554
645
1.75
Conditions
Ind'l/Auto-A
< 0.2V,
2
Auto-E
< 0.2V
IN
> 100 μs.
CC(min)
CY62128EV30
Max
Unit
10
pF
10
pF
SOIC
STSOP
Unit
48.67
32.56
°C/W
25.86
3.59
°C/W
90%
10%
Fall Time = 1 V/ns
Unit
Ω
Ω
Ω
V
[3]
Min
Typ
Max
1.5
3
30
0
t
RC
Page 4 of 11
Unit
V
μA
μA
ns
ns
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