Cypress CY62137FV30 Şartname Sayfası - Sayfa 4
Bilgisayar Donanımı Cypress CY62137FV30 için çevrimiçi göz atın veya pdf Şartname Sayfası indirin. Cypress CY62137FV30 13 sayfaları. Mobl 2-mbit (128k x 16) static ram
Thermal Resistance
Tested initially and after any design or process changes that may affect these parameters
Parameter
Description
Θ
Thermal Resistance
JA
(Junction to Ambient)
Θ
Thermal Resistance
JC
(Junction to Case)
AC Test Loads and Waveforms
R1
V
CC
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
Parameters
R1
R2
R
TH
V
TH
Data Retention Characteristics
Over the Operating Range
Parameter
Description
V
V
for Data Retention
DR
CC
[7]
I
Data Retention Current
CCDR
[8]
t
Chip Deselect to Data Retention Time
CDR
[9]
t
Operation Recovery Time
R
Data Retention Waveform
V
CC
CE or
BHE.BLE
Notes
8. Tested initially and after any design or process changes that may affect these parameters.
9. Full device operation requires linear V
10. BHE.BLE is the AND of both BHE and BLE. Deselect the chip by either disabling chip enable signals or by disabling both BHE and BLE.
Document Number: 001-07141 Rev. *F
Test Conditions
Still air, soldered on a 3 × 4.5 inch,
two layer printed circuit board
Figure 3. AC Test Loads and Waveform
V
CC
GND
R2
Rise Time = 1 V/ns
Equivalent to: THÉVENIN EQUIVALENT
OUTPUT
2.5V (2.2V to 2.7V)
16667
15385
8000
1.20
V
= 1.5V, CE > V
CC
V
> V
- 0.2V or V
IN
CC
Figure 4. Data Retention Waveform
DATA RETENTION MODE
V
CC(min)
t
CDR
> 100 μs or stable at V
ramp from V
to V
CC
DR
CC(min)
CY62137FV30 MoBL
.
VFBGA
75
10
ALL INPUT PULSES
90%
10%
R
TH
V
3.0V (2.7V to 3.6V)
1103
1554
645
1.75
Conditions
- 0.2V,
Ind'l/Auto-A
CC
< 0.2V
IN
Auto-E
[10]
V
> 1.5V
DR
> 100 μs.
CC(min)
TSOP II
Unit
°C/W
77
°C/W
13
90%
10%
Fall Time = 1 V/ns
Unit
Ω
Ω
Ω
V
[1]
Min
Typ
Max
Unit
1.5
μA
4
12
0
ns
t
ns
RC
V
CC(min)
t
R
Page 4 of 12
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