Cypress CY62167EV18 Şartname Sayfası - Sayfa 4
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Sayfayı YazdırThermal Resistance
Tested initially and after any design or process changes that may affect these parameters.
Parameter
Description
Θ
Thermal Resistance
JA
(Junction to Ambient)
Θ
Thermal Resistance
JC
(Junction to Case)
R1
V
CC
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
Parameters
R1
R2
R
TH
V
TH
Data Retention Characteristics
Over the Operating Range
Parameter
Description
V
V
for Data Retention
DR
CC
[9]
I
Data Retention Current
CCDR
[10]
t
Chip Deselect to Data
CDR
Retention Time
[11]
t
Operation Recovery Time
R
V
CC
or
CE
1
[12]
.
BHE
BLE
or
CE
2
Notes
10. Tested initially and after any design or process changes that may affect these parameters.
11. Full device operation requires linear V
12. BHE.BLE is the AND of both BHE and BLE. Deselect the chip by either disabling the chip enable signals or by disabling both BHE and BLE.
Document #: 38-05447 Rev. *G
Test Conditions
Still air, soldered on a 3 × 4.5 inch,
two-layer printed circuit board
Figure 2. AC Test Loads and Waveforms
V
R2
Rise Time = 1 V/ns
Equivalent to: THÉVENIN EQUIVALENT
OUTPUT
Conditions
V
= 1.0V, CE
> V
CC
1
CC
V
> V
– 0.2V or V
IN
CC
Figure 3. Data Retention Waveform
V
(min)
CC
t
CDR
(min) > 100 μs or stable at V
ramp from V
to V
CC
DR
CC
(6 x 7 x 1mm)
ALL INPUT PULSES
CC
90%
10%
GND
R
TH
V
1.8V
13500
10800
6000
0.80
– 0.2V, CE
< 0.2V,
2
< 0.2V
IN
DATA RETENTION MODE
> 1.0 V
V
DR
(min) > 100 μs.
CC
CY62167EV18 MoBL
VFBGA
VFBGA
(6 x 8 x 1mm)
27.74
55
9.84
16
90%
10%
Fall Time = 1 V/ns
Unit
Ω
Ω
Ω
V
[4]
Min
Typ
Max
1.0
10
0
t
RC
V
(min)
CC
t
R
Page 4 of 13
®
Unit
°C/W
°C/W
Unit
V
μA
ns
ns
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