Cypress Semiconductor CY62146EV30 Şartname Sayfası - Sayfa 4
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Capacitance
(For All Packages)
Parameter
Description
C
Input Capacitance
IN
C
Output Capacitance
OUT
Thermal Resistance
[9]
Parameter
Description
Θ
Thermal Resistance
JA
(Junction to Ambient)
Θ
Thermal Resistance
JC
(Junction to Case)
AC Test Loads and Waveforms
R1
V
CC
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
Parameters
R1
R2
R
TH
V
TH
Data Retention Characteristics
Parameter
V
V
for Data Retention
DR
CC
[8]
I
Data Retention Current
CCDR
[9]
t
Chip Deselect to Data Retention Time
CDR
[10]
t
Operation Recovery Time
R
Data Retention Waveform
V
CC
CE
Notes:
9. Tested initially and after any design or process changes that may affect these parameters.
10. Full device operation requires linear V
Document #: 38-05567 Rev. *C
[9]
T
= 25°C, f = 1 MHz,
A
V
= V
CC
CC(typ)
Test Conditions
Still Air, soldered on a 3 × 4.5 inch,
two-layer printed circuit board
R2
Rise Time = 1 V/ns
Equivalent to: THEVENIN EQUIVALENT
OUTPUT
2.50V
16667
15385
8000
1.20
(Over the Operating Range)
Description
V
CC(min)
t
CDR
ramp from V
to V
CC
DR
CC(min)
Test Conditions
VFBGA
Package
75
10
ALL INPUT PULSES
V
CC
90%
10%
GND
R
TH
V
3.0V
1103
1554
645
1.75
Conditions
V
= 1.5V, CE > V
– 0.2V,
CC
CC
V
> V
– 0.2V or V
< 0.2V
IN
CC
IN
DATA RETENTION MODE
V
> 1.5V
DR
> 100 µs or stable at V
> 100 µs.
CC(min)
CY62146EV30 MoBL
Max
Unit
10
pF
10
pF
TSOP II
Package
Unit
°C/W
77
°C/W
13
90%
10%
Fall Time = 1 V/ns
Unit
Ω
Ω
Ω
V
[2]
Min
Typ
Max
1.5
0.8
7
0
t
RC
V
CC(min)
t
R
Page 4 of 12
®
Unit
V
µA
ns
ns