Cypress Semiconductor CY7C1231H Şartname Sayfası - Sayfa 6

Bilgisayar Donanımı Cypress Semiconductor CY7C1231H için çevrimiçi göz atın veya pdf Şartname Sayfası indirin. Cypress Semiconductor CY7C1231H 13 sayfaları. Cypress 2-mbit (128k x 18) flow-through sram with nobl architecture specification sheet

Sayfayı Yazdır

Maximum Ratings

(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on V
Relative to GND........ –0.5V to +4.6V
DD
Supply Voltage on V
Relative to GND ...... –0.5V to +V
DDQ
DC Voltage Applied to Outputs
in Tri-State........................................... –0.5V to V

Electrical Characteristics

Parameter
Description
V
Power Supply Voltage
DD
V
I/O Supply Voltage
DDQ
V
Output HIGH Voltage
OH
V
Output LOW Voltage
OL
V
Input HIGH Voltage
IH
V
Input LOW Voltage
IL
I
Input Leakage Current
X
except ZZ and MODE
Input Current of MODE
Input Current of ZZ
Output Leakage Current GND ≤ V
I
OZ
I
V
Operating Supply
DD
DD
Current
I
Automatic CE
SB1
Power-down
Current—TTL Inputs
I
Automatic CE
SB2
Power-down
Current—CMOS Inputs
I
Automatic CE
SB3
Power-down
Current—CMOS Inputs
I
Automatic CE
SB4
Power-down
Current—TTL Inputs
Notes:
9. Overshoot: V
(AC) < V
+1.5V (Pulse width less than t
IH
DD
10. T
: Assumes a linear ramp from 0V to V
Power-up
Document #: 001-00207 Rev. *B
DD
+ 0.5V
DDQ
[9,10]
Over the Operating Range
Test Conditions
for 3.3V I/O
for 2.5V I/O
for 3.3V I/O, I
= –4.0 mA
OH
for 2.5V I/O, I
= –1.0 mA
OH
for 3.3V I/O, I
= 8.0 mA
OL
for 2.5V I/O, I
= 1.0 mA
OL
for 3.3V I/O
for 2.5V I/O
[9]
for 3.3V I/O
for 2.5V I/O
GND ≤ V
≤ V
I
DDQ
Input = V
SS
Input = V
DD
Input = V
SS
Input = V
DD
≤ V
, Output Disabled
I
DDQ
V
= Max., I
= 0 mA,
DD
OUT
f = f
= 1/t
MAX
CYC
V
= Max, Device Deselected,
DD
≥ V
≤ V
V
or V
, f = f
IN
IH
IN
IL
inputs switching
V
= Max, Device Deselected,
DD
≥ V
V
– 0.3V or V
IN
DD
IN
f = 0, inputs static
V
= Max, Device Deselected,
DD
≥ V
V
– 0.3V or V
IN
DDQ
IN
f = f
, inputs switching
MAX
V
= Max, Device Deselected,
DD
≥ V
V
– 0.3V or V
IN
DD
IN
f = 0, inputs static
/2), undershoot: V
CYC
(min.) within 200 ms. During this time V
DD
DC Input Voltage ................................... –0.5V to V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.................................................... > 200 mA

Operating Range

Ambient
Range
Temperature (T
Commercial
0°C to +70°C
Industrial
-40°C to +85°C
7.5-ns cycle, 133 MHz
7.5-ns cycle, 133 MHz
,
MAX
7.5-ns cycle, 133 MHz
≤ 0.3V,
7.5-ns cycle, 133 MHz
≤ 0.3V,
7.5-ns cycle, 133 MHz
≤ 0.3V,
(AC)> –2V (Pulse width less than t
IL
< V
and V
< V
IH
DD
DDQ
DD
CY7C1231H
+ 0.5V
DD
)
V
V
A
DD
DDQ
3.3V –
2.5V – 5% to
5%/+10%
V
DD
Min.
Max.
Unit
3.135
3.6
3.135
V
DD
2.375
2.625
2.4
2.0
0.4
0.4
2.0
V
+ 0.3V
DD
1.7
V
+ 0.3V
DD
–0.3
0.8
–0.3
0.7
–5
5
–30
5
–5
30
–5
5
225
90
40
75
45
/2).
CYC
.
Page 6 of 12
V
V
V
V
V
V
V
µA
µA
µA
µA
µA
µA
mA
mA
mA
mA
mA
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