Cypress Semiconductor CY7C1306BV25 Şartname Sayfası - Sayfa 15
Bilgisayar Donanımı Cypress Semiconductor CY7C1306BV25 için çevrimiçi göz atın veya pdf Şartname Sayfası indirin. Cypress Semiconductor CY7C1306BV25 20 sayfaları. Cypress 18-mbit burst of 2 pipelined sram with qdr architecture specification sheet
Sayfayı Yazdır
Maximum Ratings
(Above which the useful life may be impaired.)
Storage Temperature ................................ –65°C to + 150°C
Ambient Temperature with
Power Applied............................................ –55°C to + 125°C
Supply Voltage on V
Relative to GND....... –0.5V to + 3.6V
DD
Supply Voltage on V
Relative to GND ..... –0.5V to + V
DDQ
DC Applied to Outputs in
High-Z State ........................................ –0.5V to V
Electrical Characteristics
DC Electrical Characteristics Over the Operating Range
Parameter
Description
V
Power Supply Voltage
DD
V
I/O Supply Voltage
DDQ
V
Output HIGH Voltage
OH
V
Output LOW Voltage
OL
V
Output HIGH Voltage
OH(LOW)
V
Output LOW Voltage
OL(LOW)
V
Input HIGH Voltage
IH
V
Input LOW Voltage
IL
V
Input Reference Voltage
REF
I
Input Leakage Current
X
I
Output Leakage Current
OZ
I
V
Operating Supply
DD
DD
I
Automatic
SB1
Power-Down
Current
AC Input Requirements Over the Operating Range
Parameter
Description
V
Input HIGH Voltage
IH
V
Input LOW Voltage
IL
[20]
Thermal Resistance
Parameter
Description
Θ
Thermal Resistance
JA
(Junction to Ambient)
Θ
Thermal Resistance
JC
(Junction to Case)
Notes:
13. Power-up: Assumes a linear ramp from 0V to V
14. All Voltage referenced to Ground.
15. Output are impedance controlled. I
16. Output are impedance controlled. I
17. Overshoot: V
(AC) < V
+0.85V (Pulse width less than t
IH
DDQ
18. This spec is for all inputs except C and C Clock. For C and C Clock, V
19. V
(Min.) = 0.68V or 0.46V
REF
DDQ
20. Tested initially and after any design or process change that may affect these parameters.
Document #: 38-05627 Rev. *A
DD
+ 0.5V
DDQ
Over the Operating Range
Test Conditions
Note 15
Note 16
I
= –0.1 mA, Nominal Impedance
OH
I
= 0.1 mA, Nominal Impedance
OL
[17]
[17, 18]
[19]
Typical value = 0.75V
GND ≤ V
≤ V
I
DDQ
GND ≤ V
≤ V
I
DDQ,
V
= Max., I
DD
OUT
f = f
= 1/t
MAX
CYC
Max. V
, Both Ports Deselected,
DD
≥ V
≤ V
V
or V
IN
IH
IN
Inputs Static
Test Conditions
Test conditions follow standard test methods and
procedures for measuring thermal impedance,
per EIA/JESD51.
(min.) within 200 ms. During this time V
DD
= –V
/2)/(RQ/5) for values of 175Ω <= RQ <= 350Ω.
OH
DDQ
= (V
/2)/(RQ/5) for values of 175Ω <= RQ <= 350Ω.
OL
DDQ
/2), Undershoot: V
CYC
IL
, whichever is larger, V
(Max.) = 0.95V or 0.54V
REF
[17]
DC Input Voltage
............................... –0.5V to V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.................................................... > 200 mA
Operating Range
Ambient
Range
Temperature (T
Com'l
0°C to + 70°C
Ind'l
–40°C to + 85°C
[14]
Min.
2.4
1.4
V
/2 – 0.12
DDQ
V
/2 – 0.12
DDQ
V
– 0.2
DDQ
V
SS
V
+ 0.1
REF
–0.3
0.68
–5
Output Disabled
–5
= 0 mA,
f = f
=1/t
IL
MAX
CYC,
Min.
V
+ 0.2
REF
–
Test Conditions
< V
and V
< V
IH
DD
DDQ
(AC) > –1.5V (Pulse width less than t
IL
(Max.) = V
– 0.2V.
REF
, whichever is smaller.
DDQ
CY7C1303BV25
CY7C1306BV25
+ 0.5V
DD
[13]
)
V
V
A
DD
DDQ
2.5 ± 0.1V
1.4V to 1.9V
Typ.
Max.
2.5
2.6
1.5
1.9
V
/2 + 0.12
DDQ
V
/2 + 0.12
DDQ
V
DDQ
0.2
V
+ 0.3
DDQ
V
– 0.1
REF
0.75
0.95
5
5
500
240
Typ.
Max.
–
–
–
V
– 0.2
REF
165 FBGA Package
16.7
6.5
.
DD
/2).
CYC
Page 15 of 19
[13]
Unit
V
V
V
V
V
V
V
V
V
µA
µA
mA
mA
Unit
V
V
Unit
°C/W
°C/W
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