Cypress CY62138EV30 Технічна специфікація - Сторінка 4
Переглянути онлайн або завантажити pdf Технічна специфікація для Комп'ютерне обладнання Cypress CY62138EV30. Cypress CY62138EV30 9 сторінок. 2-mbit (256k x 8) mobl static ram
Друкувати сторінкуThermal Resistance
Parameter
Description
Θ
Thermal Resistance
JA
(Junction to Ambient)
Θ
Thermal Resistance
JC
(Junction to Case)
AC Test Loads and Waveforms
R1
V
CC
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
Parameters
R1
R2
R
TH
V
TH
Data Retention Characteristics
Parameter
Description
V
V
for Data Retention
DR
CC
I
Data Retention Current
CCDR
[7]
t
Chip Deselect to Data Retention Time
CDR
[8]
t
Operation Recovery Time
R
Data Retention Waveform
V
CC
CE
Notes:
7. Tested initially and after any design or process changes that may affect these parameters.
8. Full Device AC operation requires linear V
Document #: 38-05577 Rev. *A
Test Conditions
Still Air, soldered on a 3 x 4.5 inch, four-layer
printed circuit board
V
CC
10%
R2
GND
Rise Time: 1 V/ns
Equivalent to: THÉVENIN EQUIVALENT
OUTPUT
2.50V
16667
15385
8000
1.20
(Over the Operating Range)
V
= 1V, CE > V
CC
V
> V
IN
DATA RETENTION MODE
V
(min.)
CC
t
CDR
> 100 µs or stable at V
ramp from V
to V
CC
DR
CC(min.)
ALL INPUT PULSES
90%
90%
10%
Fall time: 1 V/ns
R
TH
V
TH
3.0V
1103
1554
645
1.75
Conditions
− 0.2V,
CC
− 0.2V or V
< 0.2V
CC
IN
V
> 1.5 V
DR
> 100 µs.
CC(min.)
CY62138EV30
®
MoBL
BGA
Unit
°C/W
72
°C/W
8.86
Unit
Ω
Ω
Ω
V
[3]
Min.
Typ.
Max.
Unit
1
V
µA
0.8
3
0
ns
t
ns
RC
1.5V
t
R
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