Cypress Semiconductor CY7C1223H Технічна специфікація
Переглянути онлайн або завантажити pdf Технічна специфікація для Комп'ютерне обладнання Cypress Semiconductor CY7C1223H. Cypress Semiconductor CY7C1223H 17 сторінок. Cypress 2-mbit (128k x 18) pipelined dcd sync sram specification sheet
Друкувати сторінкуFeatures
• Registered inputs and outputs for pipelined operation
• Optimal for performance (Double-Cycle deselect)
— Depth expansion without wait state
• 128K × 18-bit common I/O architecture
• 3.3V core power supply
• 3.3V/2.5V I/O supply
• Fast clock-to-output time
— 3.5 ns (for 166-MHz device)
— 4.0 ns (for 133-MHz device)
• Provide high-performance 3-1-1-1 access rate
• User-selectable burst counter supporting Intel
®
Pentium
interleaved or linear burst sequences
• Separate processor and controller address strobes
• Synchronous self-timed write
• Asynchronous Output Enable
• Offered in JEDEC-standard lead-free 100-pin TQFP
package
• "ZZ" Sleep Mode option
Selection Guide
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
Note:
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
Cypress Semiconductor Corporation
Document #: 38-05674 Rev. *B
2-Mbit (128K x 18) Pipelined DCD Sync SRAM
®
•
198 Champion Court
Functional Description
The CY7C1223H SRAM integrates 128K x 18 SRAM cells with
advanced synchronous peripheral circuitry and a two-bit
counter for internal burst operation. All synchronous inputs are
gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). The synchronous inputs include all
addresses, all data inputs, address-pipelining Chip Enable
(CE
), depth-expansion Chip Enables (CE
1
Control inputs (ADSC, ADSP, and ADV), Write Enables
(BW
and BWE), and Global Write (GW). Asynchronous
[A:B]
inputs include the Output Enable (OE) and the ZZ pin.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV).
Address, data inputs, and write controls are registered on-chip
to initiate a self-timed Write cycle.This part supports Byte Write
operations (see Pin Descriptions and Truth Table for further
details). Write cycles can be one to two bytes wide as
controlled by the byte write control inputs. GW active LOW
causes all bytes to be written. This device incorporates an
additional pipelined enable register which delays turning off
the output buffers an additional cycle when a deselect is
executed.This feature allows depth expansion without penal-
izing system performance.
The CY7C1223H operates from a +3.3V core power supply
while all outputs operate with either a +3.3V/2.5V supply. All
inputs and outputs are JEDEC-standard JESD8-5-compatible.
166 MHz
3.5
240
40
,
•
San Jose
CA 95134-1709
CY7C1223H
[1]
and CE
), Burst
2
3
133 MHz
Unit
4.0
ns
225
mA
40
mA
•
408-943-2600
Revised February 6, 2006
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