Cypress Semiconductor CY7C1336H Технічна специфікація - Сторінка 9
Переглянути онлайн або завантажити pdf Технічна специфікація для Комп'ютерне обладнання Cypress Semiconductor CY7C1336H. Cypress Semiconductor CY7C1336H 16 сторінок. Cypress 2-mbit (64k x 32) flow-through sync sram specification sheet
Друкувати сторінкуSwitching Characteristics
Parameter
t
V
(Typical) to the First Access
POWER
DD
Clock
t
Clock Cycle Time
CYC
t
Clock HIGH
CH
t
Clock LOW
CL
Output Times
t
Data Output Valid after CLK Rise
CDV
t
Data Output Hold after CLK Rise
DOH
t
Clock to Low-Z
CLZ
t
Clock to High-Z
CHZ
t
OE LOW to Output Valid
OEV
t
OE LOW to Output Low-Z
OELZ
t
OE HIGH to Output High-Z
OEHZ
Set-up Times
t
Address Set-up before CLK Rise
AS
t
ADSP, ADSC Set-up before CLK Rise
ADS
t
ADV Set-up before CLK Rise
ADVS
t
GW, BWE, BW
WES
t
Data Input Set-up before CLK Rise
DS
t
Chip Enable Set-up
CES
Hold Times
t
Address Hold after CLK Rise
AH
t
ADSP, ADSC Hold after CLK Rise
ADH
t
GW, BWE, BW
WEH
t
ADV Hold after CLK Rise
ADVH
t
Data Input Hold after CLK Rise
DH
t
Chip Enable Hold after CLK Rise
CEH
Notes:
10. Timing reference level is 1.5V when V
11. Test conditions shown in (a) of AC Test Loads unless otherwise noted.
12. This part has a voltage regulator internally; t
can be initiated.
13. t
, t
,t
, and t
are specified with AC test conditions shown in part (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage.
CHZ
CLZ
OELZ
OEHZ
14. At any given voltage and temperature, t
data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed
to achieve High-Z prior to Low-Z under the same system conditions.
15. This parameter is sampled and not 100% tested.
Document #: 001-00210 Rev. *A
PRELIMINARY
Over the Operating Range
Description
[12]
[13, 14, 15]
[13, 14, 15]
[13, 14, 15]
[13, 14, 15]
Set-up before CLK Rise
[A:D]
Hold after CLK Rise
[A:D]
= 3.3V.
DDQ
is the time that the power needs to be supplied above V
POWER
is less than t
and t
OEHZ
OELZ
CHZ
[10, 11]
133 MHz
Min.
Max.
1
7.5
2.5
2.5
6.5
2.0
0
3.5
3.5
0
3.5
1.5
1.5
1.5
1.5
1.5
1.5
0.5
0.5
0.5
0.5
0.5
0.5
(minimum) initially before a Read or Write operation
DD
is less than t
to eliminate bus contention between SRAMs when sharing the same
CLZ
CY7C1336H
100 MHz
Min.
Max.
Unit
1
ms
10
ns
4.0
ns
4.0
ns
8.0
ns
2.0
ns
0
ns
3.5
ns
3.5
ns
0
ns
3.5
ns
2.0
ns
2.0
ns
2.0
ns
2.0
ns
2.0
ns
2.0
ns
0.5
ns
0.5
ns
0.5
ns
0.5
ns
0.5
ns
0.5
ns
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