Cypress Semiconductor CY7C1019D Hoja de especificaciones - Página 3

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Maximum Ratings

Exceeding the maximum ratings may impair the useful life of
the device. These user guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on V
to Relative GND
CC
DC Voltage Applied to Outputs
[2]
in High-Z State
...................................–0.5V to V
[2]
DC Input Voltage
................................–0.5V to V

Electrical Characteristics

Parameter
Description
V
Output HIGH Voltage
OH
V
Output LOW Voltage
OL
V
Input HIGH Voltage
IH
V
Input LOW Voltage
IL
I
Input Leakage Current
IX
I
Output Leakage Current
OZ
I
V
Operating Supply Current
CC
CC
I
Automatic CE Power-Down
SB1
Current—TTL Inputs
I
Automatic CE Power-Down
SB2
Current—CMOS Inputs
Note
2. V
(min) = –2.0V and V
(max) = V
IL
IH
Document #: 38-05464 Rev. *E
[2]
... –0.5V to +6.0V
+ 0.5V
CC
+ 0.5V
CC
(Over the Operating Range)
I
= –4.0 mA
OH
I
= 8.0 mA
OL
[2]
GND < V
GND < V
V
= Max,
CC
I
= 0 mA,
OUT
f = f
max
Max V
V
> V
IN
Max V
V
> V
IN
+ 1V for pulse durations of less than 5 ns.
CC
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage........................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current .................................................... > 200 mA

Operating Range

Ambient
Range
Temperature
Industrial
–40°C to +85°C
Test Conditions
< V
I
CC
< V
, Output Disabled
I
CC
100 MHz
83 MHz
= 1/t
RC
66 MHz
40 MHz
, CE > V
CC
IH
or V
< V
, f = f
IH
IN
IL
max
, CE > V
– 0.3V,
CC
CC
– 0.3V, or V
< 0.3V, f = 0
CC
IN
CY7C1019D
V
Speed
CC
5V ± 0.5V
10 ns
–10 (Industrial)
Unit
Min
Max
2.4
V
0.4
V
2.2
V
+ 0.5
V
CC
–0.5
0.8
V
µA
–1
+1
µA
–1
+1
80
mA
72
mA
58
mA
37
mA
10
mA
3
mA
Page 3 of 11
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