Cypress Semiconductor CY7C1019D Hoja de especificaciones - Página 5

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Switching Characteristics

Parameter
Read Cycle
[6]
t
V
(typical) to the first access
power
CC
t
Read Cycle Time
RC
t
Address to Data Valid
AA
t
Data Hold from Address Change
OHA
t
CE LOW to Data Valid
ACE
t
OE LOW to Data Valid
DOE
t
OE LOW to Low Z
LZOE
t
OE HIGH to High Z
HZOE
t
CE LOW to Low Z
LZCE
t
CE HIGH to High Z
HZCE
[9]
t
CE LOW to Power-Up
PU
[9]
t
CE HIGH to Power-Down
PD
[10, 11]
Write Cycle
t
Write Cycle Time
WC
t
CE LOW to Write End
SCE
t
Address Set-Up to Write End
AW
t
Address Hold from Write End
HA
t
Address Set-Up to Write Start
SA
t
WE Pulse Width
PWE
t
Data Set-Up to Write End
SD
t
Data Hold from Write End
HD
t
WE HIGH to Low Z
LZWE
t
WE LOW to High Z
HZWE
Notes
5. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified
I
/I
and 30-pF load capacitance.
OL
OH
6. t
gives the minimum amount of time that the power supply should be at typical V
POWER
7. t
, t
, and t
are specified with a load capacitance of 5 pF as in (c) of
HZOE
HZCE
HZWE
high impedance state.
8. At any given temperature and voltage condition, t
9. This parameter is guaranteed by design and is not tested.
10. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. CE and WE must be LOW to initiate a write, and the transition of any of
these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write.
11. The minimum write cycle time for Write Cycle no. 3 (WE controlled, OE LOW) is the sum of t
Document #: 38-05464 Rev. *E
[5]
(Over the Operating Range)
Description
[7, 8]
[8]
[7, 8]
[8]
[7, 8]
"AC Test Loads and Waveforms
is less than t
, t
is less than t
HZCE
LZCE
HZOE
–10 (Industrial)
Min
100
10
3
0
3
0
10
7
7
0
0
7
6
0
3
values until the first memory access can be performed.
CC
[4]
" on page
4. Transition is measured when the outputs enter a
, and t
is less than t
for any given device.
LZOE
HZWE
LZWE
and t
.
HZWE
SD
CY7C1019D
Unit
Max
µs
ns
10
ns
ns
10
ns
5
ns
ns
5
ns
ns
5
ns
ns
10
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
5
ns
Page 5 of 11
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