GaN EZ Drive GS65011-EVBEZ Manuel technique - Page 11

Parcourez en ligne ou téléchargez le pdf Manuel technique pour {nom_de_la_catégorie} GaN EZ Drive GS65011-EVBEZ. GaN EZ Drive GS65011-EVBEZ 18 pages. E-hemt open loop boost evaluation board

GaN EZ Drive GS65011-EVBEZ Manuel technique
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Hardware Operation

The general guidelines for operating the evaluation board are listed in this section. Follow
the steps to configure the hardware properly.
1) Always connect a load (E-load) to Vout+ and Vout-.
2) Pre-set the PWM frequency and the duty cycle (by tuning R3 and R11), according to
the PWM signal look-up tables. Start with 10% duty cycle and frequency 250kHz.
3) Apply V
(5V
CC
DC
(VIAS) for V
monitoring
GS
4) Check the V
waveform and fine-tune the PWM frequency (by tuning R3) and duty
GS
cycle (by tuning R11)
5) For taking an efficiency measurement, add a current meter and use Vin+ and Vin- for
V
and use Vout+ and Vout- for V
IN
6) Apply V
to Vin+ and Vin- and sweep the voltage from low (0V) to max. Monitor
DC
the output voltage and device temperature. Make sure V
the GaN device temperature is lower than 150°C. Note: the maximum input voltage
is limited by the output voltage of the Boost converter, which is dependent on the
operating mode, the duty cycle and the load value.
7) After testing, turn off V
GSWPT-EVBEZ Rev. 210307
EZDrive
< V
< 12V
) to Vcc+ and Vcc-, use T_GS (MMCX JACK) or G/SS
CC
DC
measurement.
OUT
first, then V
IN
CC
© 2021 GaN Systems Inc.
Please refer to the Evaluation Board/Kit Important Notice on page 17
®
Open Loop Boost Evaluation Board
is lower than 400V, and
OUT
across Vcc+ and Vcc- last.
www.gansystems.com
GS65011-EVBEZ
Technical Manual
11