GaN EZ Drive GS65011-EVBEZ Manuel technique - Page 12

Parcourez en ligne ou téléchargez le pdf Manuel technique pour {nom_de_la_catégorie} GaN EZ Drive GS65011-EVBEZ. GaN EZ Drive GS65011-EVBEZ 18 pages. E-hemt open loop boost evaluation board

GaN EZ Drive GS65011-EVBEZ Manuel technique
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Note:
When measuring the high frequency content switch node, care must be taken to
avoid long ground leads. Measure the switch node by placing the oscilloscope probe tip
through the Drain via and Source via (designed for this purpose). See
probe technique and
Figure 5
voltage passive/differential probe for the V
Figure 6 •
Note:
A jumper is placed between the Vin+ signal and the inductor (beneath the input
capacitor C4) The jumper can be replaced by a loop of jumper wire to take the inductor
current measurement.
Figure 7
shows the jumper location.
of jumper wire to take the current measurement with a current probe. The jumper wire
loop and the current probe are not included in the Evaluation Kit.
GSWPT-EVBEZ Rev. 210307
EZDrive
for the location of V
measurement.
DS
Proper Oscilloscope Probe Measurement Technique
Figure 8
shows how to replace the jumper with a loop
© 2021 GaN Systems Inc.
Please refer to the Evaluation Board/Kit Important Notice on page 17
®
Open Loop Boost Evaluation Board
Figure 6
and V
measure vias. Use a high
GS
DS
www.gansystems.com
GS65011-EVBEZ
Technical Manual
for proper
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