Cypress Semiconductor CY62148E Fiche technique - Page 3
Parcourez en ligne ou téléchargez le pdf Fiche technique pour {nom_de_la_catégorie} Cypress Semiconductor CY62148E. Cypress Semiconductor CY62148E 11 pages. Mobl 4-mbit (512k x 8) static ram
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................ –65°C to + 150°C
Ambient Temperature with
Power Applied............................................ –55°C to + 125°C
Supply Voltage to Ground
Potential .................................–0.5V to 6.0V (V
DC Voltage Applied to Outputs
[5, 6]
in High-Z State
................–0.5V to 6.0V (V
Electrical Characteristics
Parameter
Description
V
Output HIGH
OH
Voltage
V
Output LOW Voltage I
OL
V
Input HIGH Voltage V
IH
V
Input LOW voltage
IL
I
Input Leakage
IX
Current
I
Output Leakage
OZ
Current
I
V
Operating
CC
CC
Supply Current
[9]
I
Automatic CE Power
SB2
down Current —
CMOS Inputs
Capacitance
(For All Packages)
Parameter
Description
C
Input Capacitance
IN
C
Output Capacitance
OUT
Notes
5. V
= –2.0V for pulse durations less than 20 ns for I < 30 mA.
IL(min)
6. V
= V
+0.75V for pulse durations less than 20 ns.
IH(max)
CC
7. Full device AC operation assumes a minimum of 100 µs ramp time from 0 to V
8. Under DC conditions the device meets a V
is applicable to SOIC package only. Refer to AN13470 for details.
9. Only chip enable (CE) must be HIGH at CMOS level to meet the I
10. Tested initially and after any design or process changes that may affect these parameters.
Document #: 38-05442 Rev. *F
+ 0.5V)
CCmax
+ 0.5V)
CCmax
(Over the Operating Range)
Test Conditions
I
= –1 mA
OH
= 2.1 mA
OL
= 4.5V to 5.5V
CC
V
= 4.5V to 5.5V For TSOPII
CC
package
For SOIC
package
GND < V
< V
I
CC
GND < V
< V
, Output Disabled
O
CC
f = f
= 1/t
V
= V
max
RC
CC
I
= 0 mA
OUT
f = 1 MHz
CMOS levels
CE > V
– 0.2V
CC
V
> V
– 0.2V or V
< 0.2V,
IN
CC
IN
f = 0, V
= V
CC
CC(max)
[10]
Test Conditions
T
= 25°C, f = 1 MHz,
A
V
= V
CC
CC(typ)
of 0.8V. However, in dynamic conditions Input LOW Voltage applied to the device must not be higher than 0.6V. This
IL
spec. Other inputs can be left floating.
SB2
[5, 6]
DC Input Voltage
............ –0.5V to 6.0V (V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage........................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current ......................................................>200mA
Operating Range
Device
Range
CY62148E
Ind'l/Auto-A
45 ns
[3]
Min Typ
Max
2.4
0.4
2.2
V
+ 0.5 2.2
CC
–0.5
0.8
–1
+1
–1
+1
15
20
CC(max)
2
2.5
1
7
(min) and 200 µs wait time after V
CC
CY62148E MoBL
+ 0.5V)
CCmax
Ambient
[7]
V
CC
Temperature
–40°C to +85°C
4.5V to 5.5V
[2]
55 ns
Unit
[3]
Min Typ
Max
2.4
0.4
V
+ 0.5
CC
[8]
–0.5
0.6
µA
–1
+1
µA
–1
+1
15
20
mA
2
2.5
µA
1
7
Max
Unit
10
pF
10
pF
stabilization.
CC
Page 3 of 10
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