Cypress Semiconductor CY7C1333H Fiche technique - Page 7

Parcourez en ligne ou téléchargez le pdf Fiche technique pour {nom_de_la_catégorie} Cypress Semiconductor CY7C1333H. Cypress Semiconductor CY7C1333H 13 pages. Cypress 2-mbit (64k x 32) flow-through sram with nobl architecture specification sheet

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Maximum Ratings

(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on VDD Relative to GND ...... –0.5V to +4.6V
DC Voltage Applied to Outputs
in Tri-State........................................... –0.5V to V
DC Input Voltage....................................–0.5V to V

Electrical Characteristics

Parameter
Description
V
Power Supply Voltage
DD
V
I/O Supply Voltage
DDQ
V
Output HIGH Voltage
OH
V
Output LOW Voltage
OL
V
Input HIGH Voltage
IH
V
Input LOW Voltage
IL
I
Input Load Current (except
X
ZZ and MODE)
Input Current of MODE
Input Current of ZZ
I
Output Leakage Current
OZ
I
V
Operating Supply
DD
DD
Current
I
Automatic CE Power-down
SB1
Current—TTL Inputs
I
Automatic CE Power-down
SB2
Current—CMOS Inputs
I
Automatic CE Power-down
SB3
Current—CMOS Inputs
I
Automatic CE Power-down
SB4
Current—TTL Inputs
[11]

Thermal Resistance

Parameters
Θ
Thermal Resistance
JA
(Junction to Ambient)
Θ
Thermal Resistance
JC
(Junction to Case)
Notes:
9. Overshoot: V
(AC) < V
+1.5V (Pulse width less than t
IH
DD
10. Power-up: Assumes a linear ramp from 0V to V
11. Tested initially and after any design or process changes that may affect these parameters.
Document #: 001-00209 Rev. **
PRELIMINARY
+ 0.5V
DDQ
+ 0.5V
DD
Over the Operating Range
for 3.3V I/O
for 3.3V I/O, I
= –4.0 mA
OH
for 3.3V I/O, I
= 8.0 mA
OL
for 3.3V I/O
[9]
for 3.3V I/O
GND ≤ V
≤ V
I
DDQ
Input = V
SS
Input = V
DD
Input = V
SS
Input = V
DD
GND ≤ V
≤ V
, Output Disabled
I
DD
V
= Max., I
= 0 mA,
DD
OUT
f = f
= 1/t
MAX
CYC
V
= Max, Device Deselected,
DD
≥ V
≤ V
V
or V
IN
IH
IN
inputs switching
V
= Max, Device Deselected,
DD
≥ V
V
– 0.3V or V
IN
DD
f = 0, inputs static
V
= Max, Device Deselected,
DD
≥ V
V
– 0.3V or V
IN
DDQ
f = f
, inputs switching
MAX
V
= Max, Device Deselected,
DD
≥ V
V
– 0.3V or V
IN
DD
f = 0, inputs static
Description
Test conditions follow standard test methods and
procedures for measuring thermal impedance,
per EIA/JESD51
/2), undershoot: V
CYC
(min.) within 200 ms. During this time V
DD
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.................................................... > 200 mA

Operating Range

Ambient
Range
Temperature (T
Com'l
0°C to +70°C
Ind'l
-40°C to +85°C
[9,10]
Test Conditions
7.5-ns cycle, 133 MHz
10-ns cycle, 100 MHz
7.5-ns cycle, 133 MHz
, f = f
,
IL
MAX
10-ns cycle, 100 MHz
All speeds
≤ 0.3V,
IN
7.5-ns cycle, 133 MHz
≤ 0.3V,
IN
10-ns cycle, 100 MHz
All speeds
≤ 0.3V,
IN
Test Conditions
(AC)> –2V (Pulse width less than t
IL
< V
and V
< V
IH
DD
DDQ
CY7C1333H
)
V
V
A
DD
DDQ
3.3V – 5%/+10% 3.3V – 5% to
V
DD
Min.
Max.
3.135
3.6
3.135
V
DD
2.4
0.4
2.0
V
+ 0.3V
DD
–0.3
0.8
–5
5
–30
5
–5
30
–5
5
225
205
90
80
40
75
65
45
100 TQFP
Package
Unit
30.32
°C/W
6.85
°C/W
/2).
CYC
.
DD
Page 7 of 12
Unit
V
V
V
V
V
V
µA
µA
µA
µA
µA
µA
mA
mA
mA
mA
mA
mA
mA
mA
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