Olympus U-AFA2M-VIS 사용 설명서 - 페이지 18
{카테고리_이름} Olympus U-AFA2M-VIS에 대한 사용 설명서을 온라인으로 검색하거나 PDF를 다운로드하세요. Olympus U-AFA2M-VIS 24 페이지. Active autofocusing unit
페이지 인쇄
SPECIFICATIONS
AF Unit
Item
Applicable microscope frame
Applicable illuminator
Applicable intermediate
attachment
Applicable observation tube
Applicable revolving nosepiece
Applicable observation
modules
Applicable control box
Controller
AF detection method
Applicable objectives
Applicable observation
methods
Field number
AF rate
AF repeatability
Specimen tracking range
Dimensions
Weight
14
U-AFA2M-VIS
U-BI30-2, U-TR30-2, U-ETR-4, U-TLU, U-SWTR-3, U-SWETR, U-SWETTR-5, MX-SWETTR.
U-D6REMC, U-D6BDREMC, U-D5BDREMC, U-P5REMC, U-P5BDREMC, U-D6REM, U-D5BDREM.
DIC slider: U-DICR, U-DICRH, U-DICRHC.
BX-UCB (The U-AFA2M-CB and dedicated software are required)
Pupil-division reflection active autofocusing using a laser diode and 2-division detector.
Multi-spot projection.
Laser wavelength: 775-800 nm (Class 1 IEC60825-1:2007 / IEC60825-1:2014)
Laser pulse duration: 0.5 to 2.5ms
Pulse frequency: 100 Hz.
Momentary maximum power: 200 μW. (Parallel beam)
Output from internal laser diode:
Beam divergence: // = 7 to 13 deg,
Maximum power: 10mW
See page 2 for details on the applicable objectives.
Reflected light brightfield.
Reflected light darkfield.
Reflected light DIC (using U-AN analyzer +
MX-AFDIC).
Reflected light simplified polarized light (using
U-AN analyzer + MX-AFDIC).
0.2 sec. from the proximity of focal point.
Within the focal depth of the objective in use.
5X: ±5000 μm or more.
10X: ±2000 μm.
20X: ±1100 μm.
50X: ±400 μm.
100X: ±100 μm.
150X: ±50 μm.
The tracking range is dependent on the
specimen reflectivity and objective in use.
The figures above are some of examples in a
brightfield observation of an IC wafer
specimen (reflectivity about 45%) using a
LMPlanFl 5X to 100XBD or LMPlanApo150XBD
objective.
BX61TRF + BX-RLAA
BXFMA
BX-RLAA , BXFMA-F
Polarizer: U-PO3, U-POTP3.
Analyzer: U-AN, U-AN360-3.
Analyzer slot unit: MX-AFDIC.
Computer
= 23 to 33 deg
Reflected light brightfield.
Reflected light darkfield.
Reflected light DIC (using U-AN analyzer +
MX-AFDIC).
Reflected light simplified polarized light (using
U-AN analyzer + MX-AFDIC).
22 (20 for camera observation)
5X: ±5000 μm or more.
10X: ±2000 μm.
20X: ±1100 μm.
50X: ±400 μm.
100X: ±100 μm.
150X: ±50 μm.
DUV: ±50 μm.
The tracking range is dependent on the
specimen reflectivity and objective in use.
The figures above are some of examples in a
brightfield observation of an IC wafer
specimen (reflectivity about 45%) using a
LMPlanFl 5X to 100XBD or LMPlanApo150XBD
objective.
108(W) x 45(H) x 313(D) mm
2.6 kg
U-AFA2M-DUV
U-UVF248-IM