Cypress Semiconductor CY7C1350G 사양 시트 - 페이지 6
{카테고리_이름} Cypress Semiconductor CY7C1350G에 대한 사양 시트을 온라인으로 검색하거나 PDF를 다운로드하세요. Cypress Semiconductor CY7C1350G 16 페이지. Cypress 4-mbit (128k x 36) pipelined sram with nobl architecture specification sheet
페이지 인쇄[2, 3, 4, 5, 6, 7, 8]
Truth Table
Operation
NOP/WRITE ABORT (Begin Burst) None
WRITE ABORT (Continue Burst)
IGNORE CLOCK EDGE (Stall)
SNOOZE MODE
Partial Truth Table for Read/Write
Function
Read
Write − No bytes written
Write Byte A − (DQ
and DQP
A
Write Byte B − (DQ
and DQP
B
Write Bytes A, B
Write Byte C − (DQ
and DQP
C
Write Bytes C,A
Write Bytes C, B
Write Bytes C, B, A
Write Byte D − (DQ
and DQP
D
Write Bytes D, A
Write Bytes D, B
Write Bytes D, B, A
Write Bytes D, C
Write Bytes D, C, A
Write Bytes D, C, B
Write All Bytes
ZZ Mode Electrical Characteristics
Parameter
I
Snooze mode standby current
DDZZ
t
Device operation to ZZ
ZZS
t
ZZ recovery time
ZZREC
t
ZZ active to snooze current
ZZI
t
ZZ inactive to exit snooze current
RZZI
Note:
9. Table only lists a partial listing of the byte write combinations. Any combination of BW
Document #: 38-05524 Rev. *F
(continued)
Address Used
CE
Next
Current
None
[2, 3, 9]
)
A
)
B
)
C
)
D
Description
ZZ > V
ZZ > V
ZZ < 0.2V
This parameter is sampled
This parameter is sampled
ZZ
ADV/LD
WE BW
L
L
L
L
X
L
H
X
X
L
X
X
X
H
X
X
WE
BW
BW
D
H
X
L
H
L
H
L
H
L
H
L
H
L
H
L
H
L
H
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
L
Test Conditions
− 0.2V
DD
− 0.2V
DD
is valid. Appropriate write will be done on which byte write is active.
X
CY7C1350G
OE CEN
CLK
x
H
X
L
L-H
Tri-State
H
X
L
L-H
Tri-State
X
X
H
L-H
X
X
X
X
Tri-State
BW
BW
C
B
X
X
H
H
H
H
H
L
H
L
L
H
L
H
L
L
L
L
H
H
H
H
H
L
H
L
L
H
L
H
L
L
L
L
Min.
Max.
40
2t
CYC
2t
CYC
2t
CYC
0
Page 6 of 15
DQ
—
A
X
H
L
H
L
H
L
H
L
H
L
H
L
H
L
H
L
Unit
mA
ns
ns
ns
ns
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