Cypress Semiconductor Perform CY62146E MoBL 매뉴얼 - 페이지 3

{카테고리_이름} Cypress Semiconductor Perform CY62146E MoBL에 대한 매뉴얼을 온라인으로 검색하거나 PDF를 다운로드하세요. Cypress Semiconductor Perform CY62146E MoBL 12 페이지. 4-mbit (256k x 16) static ram

Maximum Ratings

Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature .................................. –65°C to +150°C
Ambient Temperature with
Power Applied ............................................ –55°C to +125°C
Supply Voltage to Ground Potential..................–0.5V to 6.0V
DC Voltage Applied to Outputs
[3, 4]
in High-Z State
..........................................–0.5V to 6.0V

Electrical Characteristics

Over the Operating Range
Parameter
Description
V
Output HIGH Voltage
OH
V
Output LOW Voltage
OL
V
Input HIGH Voltage
IH
V
Input LOW Voltage
IL
I
Input Leakage Current
IX
I
Output Leakage Current GND < V
OZ
I
V
Operating Supply
CC
CC
Current
[6]
I
Automatic CE Power
SB2
down Current — CMOS
Inputs
Capacitance
Tested initially and after any design or process changes that may affect these parameters.
Parameter
Description
C
Input Capacitance
IN
C
Output Capacitance
OUT

Thermal Resistance

Tested initially and after any design or process changes that may affect these parameters.
Parameter
Description
Θ
Thermal Resistance
JA
(Junction to Ambient)
Θ
Thermal Resistance
JC
(Junction to Case)
Notes
3. V
(min) = –2.0V for pulse durations less than 20 ns for I < 30 mA.
IL
4. V
(max) = V
+ 0.75V for pulse durations less than 20 ns.
IH
CC
5. Full Device AC operation assumes a minimum of 100 μs ramp time from 0 to V
6. Only chip enable (CE) and byte enables (BHE and BLE) is tied to CMOS levels to meet the I
Document Number: 001-07970 Rev. *D
DC Input Voltage
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage............................................ >2001V
(MIL-STD-883, Method 3015)
Latch up Current...................................................... >200 mA

Operating Range

Test Conditions
I
= –1.0 mA
OH
I
= 2.1 mA
OL
4.5 < V
< 5.5
CC
4.5 < V
< 5.5
CC
GND < V
< V
I
CC
< V
, Output Disabled
O
CC
f = f
= 1/t
V
max
RC
CC
I
f = 1 MHz
OUT
CE > V
– 0.2V, V
> V
– 0.2V or V
CC
IN
CC
= V
f = 0, V
CC(max)
CC
Test Conditions
T
= 25°C, f = 1 MHz,
A
V
= V
CC
CC(typ)
Test Conditions
Still Air, soldered on a 3 × 4.5 inch, two layer
printed circuit board
(min) and 200 μs wait time after V
CC
[3, 4]
.......................................–0.5V to 6.0V
Device
Range
CY62146ELL
Ind'l/Auto-A –40°C to +85°C
45 ns (Ind'l/Auto-A)
Min
2.4
2.2
–0.5
–1
–1
= V
CCmax
= 0 mA, CMOS levels
< 0.2V,
IN
stabilization.
CC
/ I
spec. Other inputs are left floating.
SB2
CCDR
®
CY62146E MoBL
Ambient
[5]
V
CC
Temperature
4.5V–5.5V
[2]
Typ
Max
Unit
V
0.4
V
V
+ 0.5
V
CC
0.8
V
μA
+1
μA
+1
15
20
mA
2
2.5
μA
1
7
Max
Unit
10
pF
10
pF
TSOP II
Unit
°C/W
77
°C/W
13
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