Cypress Semiconductor Perform CY62146E MoBL 매뉴얼 - 페이지 4
{카테고리_이름} Cypress Semiconductor Perform CY62146E MoBL에 대한 매뉴얼을 온라인으로 검색하거나 PDF를 다운로드하세요. Cypress Semiconductor Perform CY62146E MoBL 12 페이지. 4-mbit (256k x 16) static ram
페이지 인쇄V
CC
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
Parameters
R1
R2
R
TH
V
TH
Data Retention Characteristics
Over the Operating Range
Parameter
Description
V
V
for Data Retention
DR
CC
[6]
I
Data Retention Current
CCDR
[7]
t
Chip Deselect to Data
CDR
Retention Time
[8]
t
Operation Recovery Time
R
V
CC
CE
Notes
7. Tested initially and after any design or process changes that may affect these parameters.
8. Full device operation requires linear V
Document Number: 001-07970 Rev. *D
Figure 2. AC Test Loads and Waveforms
R1
V
CC
GND
Rise Time = 1 V/ns
R2
Equivalent to:
V
= 2V, CE > V
CC
CC
V
> V
– 0.2V or V
IN
CC
Figure 3. Data Retention Waveform
V
CC(min)
t
CDR
> 100 μs or stable at V
ramp from V
to V
CC
DR
CC(min)
ALL INPUT PULSES
90%
10%
THÉ VENIN EQUIVALENT
R
OUTPUT
5.0V
1800
990
639
1.77
Conditions
– 0.2V,
< 0.2V
IN
DATA RETENTION MODE
V
> 2.0V
DR
> 100 μs.
CC(min)
CY62146E MoBL
90%
10%
Fall Time = 1 V/ns
TH
V
TH
Unit
Ω
Ω
Ω
V
[2]
Min
Typ
Max
2
1
7
0
t
RC
V
CC(min)
t
R
Page 4 of 11
®
Unit
V
μA
ns
ns
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