A.H. Systems PAM-0118 Руководство по эксплуатации - Страница 4

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A.H. Systems Model PAM-0118 Pre-Amplifier

INTENDED PURPOSES

This equipment is intended for general laboratory use in a wide variety of

industrial and scientific applications and designed to be used in the process of

generating, controlling and measuring high levels of electromagnetic Radio

Frequency (RF) energy. It is the responsibility of the user to assure that the

device is operated in a location which will control the radiated energy such that

it will not cause injury and will not violate regulatory levels of electromagnetic

interference.

The PAM-0118 preamplifier is reliable when operated under specified

conditions; however the use of sensitive, high-performance semiconductors

causes the preamplifier to be susceptible to ESD and EOS. The risk of damage

due to ESD is small, but possible, because the charged object would have to

come in contact with one of the center conductors. It is more likely that EOS

damage will cause the failure of the preamplifier.

ESD – (Electrostatic Discharge)

A discharge of static electricity can degrade or even worse, seriously damage

the preamplifier. There are two kinds of ESD damage that can occur. The worst

being severe resulting in complete failure of the preamplifier. This damage is

relatively easy to create although often expensive and time consuming to fix.

The second kind of damage is less severe and can result in degradation or

weakening of components which will not result in evident failure. This kind of

damage is difficult to detect and often results in faulty or degraded performance.

EOS – (Electrical Overstress)

Precautions against EOS should always be maintained while operating the

preamplifier. It must be emphasized that excessive power applied to the RF

input of the preamplifier will damage the input stage. EOS damage can even

occur when storing the preamplifier in areas of strong EMI or RFI fields.

Improper connection sequence is another possible source of EOS damage

such as application of RF signals to the preamplifier before powering up. When

connecting alternate sources of DC power caution should be made that

excessive Input DC voltage is not applied as this is another source of EOS

damage. Loose connections causing intermittent events can also damage the

preamplifier.

REV B