Cypress Semiconductor NoBL CY7C1352G 사양 시트 - 페이지 6
{카테고리_이름} Cypress Semiconductor NoBL CY7C1352G에 대한 사양 시트을 온라인으로 검색하거나 PDF를 다운로드하세요. Cypress Semiconductor NoBL CY7C1352G 13 페이지. 4-mbit (256k x 18) pipelined sram with nobl architecture
페이지 인쇄Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ..................................... −65°C to +150°C
Ambient Temperature with
Power Applied.................................................. −55°C to +125°C
Supply Voltage on V
Relative to GND.........−0.5V to +4.6V
DD
Relative to GND .......−0.5V to +V
Supply Voltage on V
DDQ
DC Voltage Applied to Outputs
in tri-state ..................................................−0.5V to V
Electrical Characteristics
Parameter
Description
V
Power Supply Voltage
DD
V
I/O Supply Voltage
DDQ
V
Output HIGH Voltage
OH
V
Output LOW Voltage
OL
V
Input HIGH Voltage
IH
V
Input LOW Voltage
IL
I
Input Leakage Current
X
except ZZ and MODE
Input Current of MODE Input = V
Input Current of ZZ
Output Leakage Current GND ≤ V
I
OZ
I
V
Operating Supply
DD
DD
Current
I
Automatic CE
SB1
Power-Down
Current—TTL Inputs
I
Automatic CE
SB2
Power-down
Current—CMOS Inputs
I
Automatic CE
SB3
Power-down
Current—CMOS Inputs
Notes:
9. Overshoot: V
(AC) < V
+1.5V (Pulse width less than t
IH
DD
10. T
: Assumes a linear ramp from 0V to V
Power-up
Document #: 38-05514 Rev. *D
DD
+ 0.5V
DDQ
[9, 10]
Over the Operating Range
Test Conditions
for 3.3V I/O, I
= –4.0 mA
OH
for 2.5V I/O, I
= –1.0 mA
OH
for 3.3V I/O, I
= 8.0 mA
OL
for 2.5V I/O, I
= 1.0 mA
OL
[9]
for 3.3V I/O
for 2.5V I/O
[9]
for 3.3V I/O
for 2.5V I/O
GND ≤ V
≤ V
I
DDQ
SS
Input = V
DD
Input = V
SS
Input = V
DD
≤ V
Output Disabled
I
DDQ,
V
= Max., I
= 0 mA,
DD
OUT
f = f
= 1/t
MAX
CYC
V
= Max, Device Deselected,
DD
≥ V
≤ V
V
or V
IN
IH
IN
IL
f = f
= 1/t
MAX
CYC
V
= Max, Device Deselected,
DD
≤ 0.3V or
V
IN
V
> V
– 0.3V, f = 0
IN
DDQ
V
= Max, Device Deselected,
DD
≤ 0.3V or
or V
IN
V
> V
– 0.3V
IN
DDQ
f = f
= 1/t
MAX
CYC
/2), undershoot: V
CYC
(min.) within 200 ms. During this time V
DD
DC Input Voltage ...................................... −0.5V to V
Current into Outputs (LOW)......................................... 20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current.................................................... > 200 mA
Operating Range
Ambient
Range
Temperature (T
Commercial
0°C to +70°C
Industrial
–40°C to +85°C
4-ns cycle, 250 MHz
5-ns cycle, 200 MHz
6-ns cycle, 166 MHz
7.5-ns cycle,133 MHz
4-ns cycle, 250 MHz
5-ns cycle, 200 MHz
6-ns cycle, 166 MHz
7.5-ns cycle,133 MHz
All speeds
4-ns cycle, 250 MHz
5-ns cycle, 200 MHz
6-ns cycle, 166 MHz
7.5-ns cycle,133 MHz
(AC)> –2V (Pulse width less than t
IL
CYC
< V
and V
< V
IH
DD
DDQ
DD.
CY7C1352G
+ 0.5V
DD
)
V
V
A
DD
DDQ
3.3V –5%
2.5V –5%
+10%
to V
DD
Min.
Max.
Unit
3.135
3.6
V
2.375
V
V
DD
2.4
V
2.0
V
0.4
V
0.4
V
2.0
V
+ 0.3V
V
DD
1.7
V
+ 0.3V
V
DD
–0.3
0.8
V
–0.3
0.7
V
−5
µA
5
−30
µA
µA
5
−5
µA
µA
30
−5
µA
5
325
mA
265
mA
240
mA
225
mA
120
mA
110
mA
100
mA
90
mA
40
mA
105
mA
95
mA
85
mA
75
mA
/2).
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