HP 234664-002 - ProLiant - ML330T02 Giriş Kılavuzu - Sayfa 3

Masaüstü HP 234664-002 - ProLiant - ML330T02 için çevrimiçi göz atın veya pdf Giriş Kılavuzu indirin. HP 234664-002 - ProLiant - ML330T02 10 sayfaları. Visualization and acceleration in hp proliant servers
Ayrıca HP 234664-002 - ProLiant - ML330T02 için: Sıkça Sorulan Sorular (4 sayfalar), Uygulama Kılavuzu (35 sayfalar), Teknik Beyaz Kitap (12 sayfalar), Ürün Yazılımı Güncellemesi (9 sayfalar), Genel Bakış (20 sayfalar), Uygulama Kılavuzu (26 sayfalar), Giriş Kılavuzu (22 sayfalar), Sorun Giderme Kılavuzu (18 sayfalar), Uygulama Kılavuzu (11 sayfalar), Kurulum Kılavuzu (2 sayfalar), Yapılandırma Kılavuzu (2 sayfalar), Giriş Kılavuzu (19 sayfalar), Güncelleme Kılavuzu (9 sayfalar), Güncelleme Kılavuzu (16 sayfalar), Kurulum Talimatları Kılavuzu (15 sayfalar), Teknoloji Özeti (9 sayfalar)

Each stub-bus connection creates an impedance discontinuity that negatively affects signal integrity. In

addition, each DIMM creates an electrical load on the bus. The electrical load accumulates as DIMMs

are added. These factors decrease the number DIMMs per channel that can be supported as the bus

speed increases. For example, Figure 2 shows the number of loads supported per channel at data

rates ranging from PC 100 to DDR-3 1600. Note that the number of supported loads drops from eight

to two as data rates increase to DDR2 800.

Increasing the number of channels to compensate for the drop in capacity per channel was not a

viable option due to increased cost and board complexity. System designers had two options: limit

memory capacity so that fewer errors occur at higher speeds, or use slower bus speeds and increase

the DRAM density. For future generations of high-performance servers, neither option was acceptable.

Future generations of servers require an improved memory architecture to achieve higher memory

bandwidth and capacity. Consequently, JEDEC

developed the Fully-Buffered DIMM specification, a

serial interface that eliminates the parallel stub-bus topology and allows higher memory bandwidth

while maintaining or increasing memory capacity.

Figure 2. Maximum number of loads per channel based on DRAM data rate.

The Joint Electron Device Engineering Council (JEDEC) is the semiconductor engineering standardization body

of the Electronic Industries Alliance. HP works with JEDEC memory vendors and chipset developers during

memory technology development to ensure that new memory products fulfill customer needs in regards to

reliability, cost, and backward compatibility.